Rise in Trend of Component Miniaturization Expected to Drive World TVS Diodes Market over the Forecast Period: Ken Research

Transient voltage suppressor (TVS) is a general classification of an array of devices which are designed to protect the sensitive circuitry from getting damaged through high voltage transients. The diodes are solid plate p-n junction devices. The electric characteristics of diodes are determined by some parameters such as substrate resistivity and doping concentration junction area. The diodes are designed with wide cross sectional area junctions to absorb high transient currents. TVS diodes are available in wide range of operating voltages, common devices voltages ranges from 5V-440V for discrete devices.

TVS diodes are characterized by clamping voltage, parasitic inductance, breakdown voltage, leakage current, breakdown voltage, parasitic capacitance and maximum reverse standoff voltage. Key benefits are availability of high current protection for 6KA to 10 KA, low incremental surge resistance, innovative packaging signal protection, extensive electrical test capability & continuous reliability monitoring, controlled die foundries, assemble & screening locations and industry-leading applications support or solutions for DO-160 & special requirements

According to study, “World TVS Diodes Market Research Report 2024(Covering USA, Europe, China, Japan, SEA and India)” the key companies operating in the world TVS diodes market are Vishay, STMicroelectronics, Littelfuse Inc., Bourns Inc., Infineon Technologies AG, Diodes Inc., NXP, BrightKing, Fairchild, Anova, Toshiba, ON Semiconductor, Protek Devices, Semtech Corp., Electronics Industry Public Company Limited (EIC), Continental Devices India Ltd., Sensitron Semiconductor, Mde, Socay, Wayon, Microsemi, Inpaq, Torex, Solid State Manufacturing, UN Semiconductor, LAN technology, Bencent, ONCHIP.

Based on product type, TVS diodes market is segmented into unidirectional TVS products and bidirectional TVS products. Unidirectional segment operates as a rectifier in forward direction like any other avalanche diode, but is made or tested to handle huge peak currents. Based on devices, market is segmented into bypass capacitor (decoupling capacitors), MOVs (Metal Oxide Varistors), zener diodes, PolySwitch and Avalanche diode. Based on arrays, market is segmented into standard capacitance (less than 100 pF), low capacitance (5 to 100 pF) and ultra-capacitance (less than 10 pF). Based on application, market is segmented into data & signal lines, microprocessors and MOS memory, telecommunication equipment, AC power lines and clamping in low energy circuits & systems. In addition, based on end-use, market is segmented into consumer electronic, power supplies, automotive electronics, telecommunications, industrial, computer and others.

The TVS diodes market is driven by fast response time of the diode (less than 1ns from 0 volts to BV), followed by rise in trend of component miniaturization, advancements in technologies, rise in demand from various end-use applications and increase in sensitivity to electrical stresses. The fast response time indicates the voltage overshoot is owing to PC board traces & lead inductance. However, high cost and low energy handling may impact the market.

Based on geography, USA country holds major share in TVS diodes market owing to rise in demand & consumption of electronics devices in the country. China, India and Europe are expected to witness lucrative growth rate due to rapidly expanding electronics devices users over the forecast period. The worldwide market is projected to grow at a CAGR of approximately 6.0% over the next five years, will reach US $950 million in 2024, from US $710 million in 2019.

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Global TVS Diodes Market

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